GT10J312(Q)

GT10J312(Q)

Part Number: GT10J312(Q)
Product Classification: Single IGBTs
Manufacturer: Toshiba Semiconductor and Storage
Description: IGBT 600V 10A 60W TO220SM
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Obsolete
  • Mounting Type Through Hole
  • Supplier Device Package -
  • Reverse Recovery Time (trr) 200 ns
  • Operating Temperature 150°C (TJ)
  • IGBT Type -
  • Voltage - Collector Emitter Breakdown (Max) 600 V
  • Input Type Standard
  • Power - Max 60 W
  • Switching Energy -
  • Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
  • Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
  • Current - Collector (Ic) (Max) 10 A
  • Current - Collector Pulsed (Icm) 20 A
  • Td (on/off) @ 25°C 400ns/400ns
  • Test Condition 300V, 10A, 100Ohm, 15V